Quasi 3-D Simulation of Quantum Well DFB Lasers
نویسندگان
چکیده
A quasi-3 D simulation for quantum well (QW) distributed feedback (DFB) laser diodes is presented. Longitudinal effects such as the nonuniformity of the optical intensity, local gain and spontaneous emission are considered as well as lateral effects such as current spreading and quantum carrier capture. The simulation is performed by solving several 2-D cross-sections using Minilase II and a 1-D longitudinal solver in a self-consistent fashion. As an example an analysis of spatial hole burning in a A/4 phase shifted DFB laser is given. It is shown that spatial hole burning (SHB) results in a local gain saturation and is mainly restricted to electrons and holes within the QW.
منابع مشابه
Optical ASK and FSK Modulation By Using Quantum Well Transistor Lasers
In this paper, transistor lasers (TLs) are used as an optical modulator for generation of ASK(Amplitude Shift Keying) and FSK (Frequency Shift Keying) optical signals. Our analysis is based on continuity equation, rate equations, and the theory of discontinuity of quasi-fermi level at the abrupt junction. Our simulation results indicate that, the specification of ASK and FSK optical signals, ar...
متن کاملThe Effects of Strained Multiple Quantum Well on the Chirped DFB-SOA All Optical Flip-Flop
In this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (MQW) chirped distributed feedback semiconductor optical amplifier (DFB-SOA) all-optical flip-flop is precisely derived. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the ...
متن کاملHeterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon
Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recent...
متن کاملIntegrated hybrid silicon DFB laser-EAM array using quantum well intermixing.
We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-gro...
متن کاملLong-wavelength InGaAsP/InP multiquantum well distributed feedback and distributed Bragg reflector l - Quantum Electronics, IEEE Journal of
AbstructWe demonstrated the successful operation of longwavelength InGaAsP low threshold-current index-coupled and gain-coupled DFB lasers grown by chemical beam epitaxy (CBE). For index-coupled DFB lasers, buried-heterostructure six-QW DFB lasers (250 pm long and as-cleaved) operated at 1.55 Lrm with CW threshold currents 10-15 mA and slope efficiencies up to 0.35 mW/mA (both facets). A side-m...
متن کامل